TSMC vice president for research and development said that the company has completed the development of 28nm production methods and plans to begin mass production of wafers for the new rules. Go to a more subtle full-node production methods allow for more efficient energy-efficient model with lower power consumption.

TSMC reported on their achievements at a symposium held in Japan on 17 June. The manufacturer reported that it had received good results in the creation of 64Mbit SRAM-structure for 28nm technology with a dual / triple gate. Cells were demonstrated with the side 0.127mkn and average density of more 3.9mln gates / mm ². TSMC reported that the use of transistors on silicon with low delay and low working currents enhances the rate of up to 25-40% and increase productivity up to 30-50% compared to the previous 45nm technology.