Company Samsung Electronics beginning to send samples to its partners 35nm NAND flash chips to the controller IC, which signals the imminent appearance on the market NAND flash memory 30nm-class, which will have the density of up to 32Gbit.

According to the source, the company Toshiba also intends to increase production in July NAND-products, and, presumably, Samsung will follow their example. Increased production by Toshiba is easy to explain, if you remember the release of a mobile phone iPhone 3GS, NAND flash memory chips which makes the Toshiba. Technology Toshiba, allowing one MLC-cell recording 3 bits of information and providing a higher data storage density and cost savings, potentially dangerous for the Samsung. Mass production of 3-bit MLC chips Toshiba, made on 32nm production methods, and Samsung, trying to overtake a competitor, going in the coming months begin to release their own new high-performance flash memory.