Numonyx and Intel just announced that they had managed to stack multiple grids PRAM on the same die, increasing the capacity of a chip significantly.

The PRAM is even more interesting

So far, a chip PRAM was limited to a grid die. By adding a number of grids on the first, the two companies could get a chip with 8 MB without losing speed and without increasing consumption significantly. Appointed PCMS (Phase Change Memory Stackable), this memory could in the long term, replace the DRAM because of its bandwidth and NAND due to its non-volatility. Neither Intel nor speak again Numonyx marketing.

To achieve their ends, both companies used a film made of a material belonging to the same class as the chalcogenide glass. It separates two layers of PRAM by preventing the change of state of one influence the other.

Name:  PRAM-Mbit-Samsung,C-M-454-3.jpg
Views: 89
Size:  48.5 KB