Corporation Intel and the company Numonyx declared a major breakthrough in the formation of Phase Change Memory (PCM) - a new type of nonvolatile memory with the possibility of creating multi-layered arrays on a single chip. This will create a high-speed storage and memory with random access, which will have a higher density data storage, lower power consumption and miniature size.

Breakthrough implemented in the framework of cooperation between Numonyx and Intel. In joint research companies were able to develop a method for forming a multilayer memory based on phase transitions, be able to produce a vertically integrated cell PCM (S). Each includes two elements that are in parallel layers: PCM and the switching module Ovonic Threshold Switch (OTS). Together, PCM (S) form a junction array. Ability to impose layers of PCM (S)-cells to each other can increase the density of information storage, while maintaining the characteristics of single-layer phase memory.

Phase memory cells are formed by combining elements of data storage as well as switching element. Utilize PCM as an element of data storage has long sought after, but has formerly been used several types of switching elements, which restricts the arrays on the size as well as efficiency. Numonyx with Intel's engineers were capable to make use of thin-film OTS as the switching element. It corresponds to the physical and electrical properties of PCM, opening the possibility of scaling. Thanks to this innovation made possible the creation of multi-memory.

Intel as well as Numonyx hooks up the memory cell with CMOS-structures that offer the logic functions with signal conversion. The developers have established that the dumping of information stored in the cells is carried out for 9 ns, with the memory it does not lose properties, even after 1 million erase / write cycles.

More information will be contained in the joint report, "The multilayer nodal memory based on phase transitions» (A Stackable Cross Point Phase Change Memory), presented at the International Electron Devices Meeting 2009 in Baltimore (Maryland) on December 9. His co-authors are employees of Intel and Numonyx. The report will be submitted to the engineer Intel DerChanom Kau.