Toshiba at present declare that it has developed a high resolution photo resist (photo-sensitive film) necessary for upcoming application of EUV (extreme ultraviolet) lithography in semiconductor fabrication, as well as proved its feasibility with the world's former 20nm-scale generation process technology.

Toshiba will advance progress of the performance of the molecular resist as well as apply it to the production of 20nm-scale generation LSIs.

According to the International Technology Roadmap for Semiconductors (ITRS), elevated volume production of this generation is estimated to start in 2013.