Hynix Semiconductor has obtained certification from Intel 2Gbitnyh DDR3 DRAM memory chips, which are produced on 40 nm process technology. Producer says he began mass production and is awaiting review RDIMM, which will also be completed before the end of the year.

We have started production of components 2Gbit DDR3 SDRAM, 4GB of DDR3 SO-DIMM and 2GB DDR3 Unbuffered DIMM. These chips have an operating frequency of 1333MHz and the input voltage 1.5V. The new chips have a maximum frequency of data 1867MGts with 16-bit bus and I / O bandwidth of 3.7Gbit / sec.

Hynix said that the performance of its 40 nm 2Gbit DDR3 chips increased by more than 60% compared with 50 nm chips, with their energy consumption decreased by 40%. Dzh.B.Kim (JBKim), vice-president of Hynix, said that the new memory will be primarily used in high-performance servers.