Samsung Electronics Corporation declared the industry's former mass production of 3-bit Multi-Level-Cell (MLC) NAND Flash chips on top of 30nm process technology. The new-fangled memory chips will be used in NAND flash module with an exclusive 3-bit NAND controller Samsung. Initially, these chips will be used in the 8GB memory cards Micro Secure Digital (MicroSD), by 3-bit chips will find their application in different areas of the market.

"The introduction of cost-effective 30nm 3-bit technology expands our base of solutions of NAND memory and makes NAND more attractive for a variety of market applications", ─ says Su-Yin Cho (Soo-In Cho), executive vice president and general manager of the company's memory Samsung. ─ "Our 3-bit NAND memory will promote the development of economically competitive custom storage with high-density recording."

Trehbitnye cell NAND memory can improve storage efficiency by 50% compared to today's 2-bit MLC NAND chips. New 30nm Memory Samsung with 3-bit MLC NAND memory locations allowing consumers to more efficiently store data and can be used in a wide range of devices, including the popular USB-Flash Drives.

In 2005, Samsung introduced its first 50-nm 16Gbit MLC NAND memory chips, after which the era of unprecedented growth of flash outside a high-performance, but expensive SLC (Single-Level-Cell) memory. Mass production of 30nm 3-bit NAND chips are expected to significantly increase the proportion of NAND flash memory high-density (32GB and above).