Samsung Electronics Co., Ltd., A world leader in advanced semiconductor technology solutions, announced the industry's first mass production of 30nm 32Gbit Multi-Level-Cell (MLC) NAND flash memory with asynchronous DDR (double data rate) interface. The manufacturer claims that the delivery of the first DDR NAND chips major OEM-manufacturers have begun in late November.

DDR NAND dramatically increases the productivity of mobile devices during read operations that require high speeds and large amounts of memory. New chips Samsung DDR MLC NAND, the read speed with which reaches 133Mbit / s, will replace the SDR (single data rate) MLC NAND, which has a read speed of 40Mbit / s. "With the new DDR MLC NAND chips double data rate can be achieved without increasing power consumption, giving designers more freedom in creating different devices", ─ said Su-Yin Cho, executive vice president and general manager of memory of Samsung Electronics.

He added that "the acceleration of Samsung in the direction of memory solutions at much higher speeds will rapidly deploy high-performance mobile devices that provide additional convenience for consumers." Asynchronous chips Samsung DDR MLC NAND can be used in SSD for computers, high-performance memory cards SD for smartphones, as well as in memory Samsung moviNAND. In addition, the memory with high density and high productivity is the ideal solution for personal media players, MP3-players and car navigation systems.

30nm chips Samsung DDR MLC NAND comes just eight months after the manufacturer announced the appearance of its 30nm 32Gbit MLC NAND memory. Using 30nm DDR NAND memory chip allows the card to reach a speed reading at 60Mbit / s, representing an increase of productivity at least 300% compared to the SDR NAND cards, working with an average reading speed 17Mbit / s. Mass production of asynchronous DDR MLC NAND memory is expected to significantly increase the share of consumer electronics with high-density data. According to analyst firm Gartner Dataquest, the global market of NAND flash memory in 2009 will be $ 13.8mlrd, and in 2012 will reach $ 23.6mlrd.