Samsung Corporation has liberated the foremost batch of NAND flash memory based on multilevel cell technology for 30-nm process technology. The chips will be used in flash module 8 GB microSD card with 3-bit NAND controllers Samsung.

Cost-saving 3-bit memory and 30-nm process technology expands the range of Samsung NAND solutions and makes NAND memory is even more attractive," - said Yoon Dong-soo, executive vice president of marketing for memory devices, Samsung Electronics. "Our 3-bit NAND memory will allow creating cheaper consumer storage devices with higher memory.

The effectiveness of 3-bit NAND memory-based multi-level cell technology to 30 nm by 50% exceeds the figures most common is 2-bit NAND memory. New memory is Samsung - is an effective solution based on NAND, which can be used in memory cards and flash drives.

In 2005, the Company showed 16-gigabit memory device based on multilevel cell expertise for 50-nm process technology, which guided in a period of speedy development segment of flash memory. New generation of memory should significantly increase the proportion of NAND memory in the segment of high-volume storage (up to 32 GB), which is in demand in the market through the development of portable devices, losing video.