Still based on Moore's Law, Intel is working on how to create transistors that not only shifting faster, but also use less energy. To achieve this, the largest manufacturer of processors is considering replacing the silicon channel transistors mixed semiconductor material such as indium gallium arsenide (InGaAs).

Investigation of Intel Corporation recently reached a turning mark, according to the manufacturer. Developers have bolt with a high dielectric constant (high-k metal gate, HKMG), which can reduce leakage field-effect transistors. Tests of this innovation have shown that gate leakage for devices with short channels were reduced by 1000x, while the thickness of the conductive oxide was reduced by 33%, resulting in higher switching speeds and improve chip performance. While all this sounds very good, it should be noted that this technology is unlikely to be realized in bulk devices until the middle of the next decade, as developers to do a lot of work.