The developers of Intel reported the successful creation of the FET InGaAs (indium gallium arsenide) on a silicon base, situated on dielectric (ie, silicon on insulator, SoI). The new technology applies to high-k gate and reduces the thickness of the gate oxide, which is apparently very good. Mike, director of research component of the Intel Labs and vice president of production and technology Intel, said that the new transistor gate length is quite short. Unfortunately, the contacts are still too large, which probably means that the interference with the work of the transistor will be great. The next stage of development will be to establish contacts, the smaller size, that minimize the barrier between the metal contacts and the quantum wells; it is not very clear, but cool.

Scientists Intel took about three years of work on compound semiconductors to embed InGaAs transistors on a silicon substrate. If further development will be successful, this technology can be used in mass production of processors, combining conventional methods of manufacturing silicon chips with high speed and high currents of InGaAs.