Thread: The NAND 2x nm in 2010

Micron announced it would soon send copies of tests NAND burned at 2x nm, in partnership with Intel.

Fierce competition

If the firm has refused to give a finesse burning more precise, we know that the first modules will leave the factory early next year. It must be said that competition is fierce as TSMC expects to burn in 28 nm in 2010 and Toshiba and SanDisk have announced NAND less than 30 nm for the next year (see "Toshiba, SanDisk and 20 nm in 2010 ").

2010: A good year for flash memory

Intel and Micron could nevertheless be the first to make this kind of chip, allowing the firm to Santa Clara to renew its catalog of DSS by the middle of next year. Manufacturers of NAND rejoice in all cases the forecasts for 2010 and 2011 are excellent. Prices should be maintained and the request should be at the rendezvous.