Intel and Micron will announce the first NAND engraved in 25 nm, which will double the capacity of products using this memory without needing to add smart.

8GB MLC in 25 nm

Intel has already begun shipping samples of test 8GB MLC 2 bits per cell to its partners. The new die is 8 mm x 18.8 mm and includes 64 Gbit modules. Both companies hope that this will accelerate the democratization of DSS. This technology should, in fact, facilitate lower prices because it will be possible to create more memory on a single wafer and reduce the number of chips needed for the same capacity. Intel stresses that the die is sufficiently small to pass through the center hole of a CD, but can also contain ten times more information than the media.

The future: 400MB / s and dies 3D

This chip uses version 2.2 of the Open NAND Flash Interface (ONFI) which flows up around 200 Mb / s. Intel is working on version 3.0 that can rise up to 400 Mb / s. The founder hopes thus consolidating his lead over the competition and the two companies are currently considering the 3D structures to repel a further increase in the fine print, because the 25 nm manufacturing has been particularly difficult and the closer of the atom, the more things get complicated.

Name: Intel-wafer-NAND-25-nm,A-3-237531-3.jpg Views: 26 Size: 8.2 KB