On the memory market is the motto, the smaller the transistors, the higher storage density, relatively well known. But the ability to squeeze more storage space on the same given surface is just one of the advantages of tuned transistor. Production costs per gigabyte also decreased which will ultimately give us more and cheaper memory modules. Now that Micron and Nanya reports that they had begun to produce 2Gb DDR3 memory circuits in copper-based 42nm technology, we can quickly discern 16GB memory modules on the horizon.

The new memory chips that are rated to operate at 1866MHz will begin mass production in the second half of 2010, and products for both the mobile and desktop market is on the agenda. The supply voltage for memory chips is reduced to 1.35 V as a standard which will provide up to 30 percent lower power consumption in some cases.

Already, says Micron is able to get to memory circuits manufactured with 3Xnm technology in their test lab, where a great copper metallization is one of the keys to the manufacturer's progress.