Advanced memory module before Samsung's 16GB, 2Gbit chips are manufactured using 50nm technology. New module-based chip technology 4Gbit DDR3 Samsung's latest 40nm. Samsung has started using 40nm process for the manufacture of memory products since July 2009. Mr. Soo-In Cho, CEO of Samsung Electronics' Memory Division, said in the second half of 2010, Samsung plans to move to 30nm process technology.

Samsung said RDIMM modules, including 36 new DDR3 chip that can run at faster than or equal to 40nm 16GB modules without increasing power consumption.

A dual CPU server 12 can hold up to 32GB of DRAM modules, bringing the total memory capacity increase to 384GB; double the before capacity 192GB/May owners. Servers using the new modules reduce power consumption by 5% compared with systems using modules 16GB, Samsung said.

With 32GB RDIMM 6 bar, a dual CPU server will have 192GB of storage, high speed DRAM operation in two-way server systems 33%, from 800 Mbits / sec to 1066 Mbits / sec. Electricity consumption will decrease 40%.

Expected, 32GB RDIMM begin mass production in April 2010