If we are to believe certain sources, Toshiba has plans to invest some 160 million dollars to set up a production line test, dedicated to the manufacture of NAND flash memory chips burned in less than 25 nm. Toshiba has also already ordered equipment from ASML authorizing such a fine engraving.

Currently, NAND flash chips coming out of factories Toshiba are etched into 43 nm or 32 nm. The manufacturer plans to move to a fine engraving of between 20 and 29 nm before the end of the year, while the first chips made in less than 20 nm could be set up in 2012. It remains to be hoped that no further technical difficulty will not disrupt this timetable rather optimistic.