Samsung Electronics and Toshiba said they plan to push for a novel condition intended to accelerate the flow of data in NAND flash memory, used to store data in creations from iPads and iPhones to SSDs (solid state drives) used in PCs and data centers.

The world's two biggest manufacturers of NAND flash memory chips devoted themselves to expand DDR (Double Data Rate) NAND flash memory with a 400-megabit-per-second interface, which is faster than the 133Mbps on a previous specification for technology and ten times quicker than 40Mbps interface, found on traditional NAND flash chips.

The technology, known toggle-mode DDR, is as well a competitor to ONFI (Open NAND Flash Interface) supported by Intel, Micron Technology and SanDisk. The two technologies are meant at high performance inventions for example SSDs, which NAND flash backers soon expect will restore hard disc drives (HDDs). ONFI can carry paces of 166Mbps and 200Mbps, as per the information from ONFI website.

"Both executions are targeting same performance levels," said Gregory Wong, CEO of industry researcher Forward Impending. "ONFI has a advance as it was established earlier, but toggle-mode DDR is a bit more compatible with standard asynchronous interface."

He said acceptance rate of two technologies will be influenced by provide, and because Samsung and Toshiba provide approximately 70 percent of NAND flash memory market, they can influence their management to enlarge adoption of toggle-mode DDR.

An analyst at Objective Analysis, alleged faster interfaces in favor of NAND chips are significant as of their increasing utilize for data processing, and not only song, images, videos and USB drives. The Samsung, Toshiba statement makes clear two corporations are tackling compatibility subject in toggle-mode DDR, he added.