Recently, the lab has been tested a lot of cost modules DDR3, and the best in terms of overclocking potential of the memory chips are made by Samsung and Hynix with a density of 2 gigabits, to learn how to overclock the original modules in these chips, covered in a recent material. It is no secret, and the fact that in addition to use in the manufacture of custom modules, Samsung and Hynix supply these same sets of chips for many manufacturers of high-frequency "overclock" memory (Corsair, G.Skill, GeIL, Kingston, and others), which then produce selection and According to the results determine the frequency at which the work will be complete. That is actually the company's customers are engaged in overclocking the memory, but on an industrial scale.
Does this mean that the sets of memory with a high nominal rate is already overclocked by the manufacturer to the limit and, therefore, to disperse them even higher is not out not at all, naturally as a percentage of their dispersal will not be as impressive as the use of low-cost modules with the same chips. But in any case, the manufacturer leaves a margin
of frequency, besides the fact of being selected to work at higher frequencies allows us to hope that the clock speed of chips used in the memory a little bit expensive, but higher.
To test these hypotheses, the test was taken three sets of memory designed to work in the four-channel mode on a platform Socket 2011 Sandy Bridge-E all participants are based on the "right" chips, two of them initially operate with very high nominal frequency (2400 MHz), and the third with the lower (1600 MHz) frequency is used for comparison.
It is clear that the four-way memory for the platform of interest only a small percentage of readers, but in this case is just an excuse to get a chance to test as soon as four identical modules of each type, as well as to compare the acceleration during the installation of two or four bars at a time, including two other topical at the moment platforms - Socket AM3 + Bulldozer and Socket 1155 Ivy Bridge.
In addition to the traditional test for acceleration dependence of the frequency of the timings and voltage) and search for the minimum latency for standard frequencies, a small test was conducted influence the frequency of memory performance.